| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | F-based 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 건식식각에 관한 연구 |
| 초록 | We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled BCl3/SF6 and BCl3/CF4 plasmas. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and gas composition (60 - 100% BCl3 in BCl3/SF6, BCl3/CF4). The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. BCl3/SF6 and BCl3/CF4 selective etching of GaAs showed quite good results in this study. SF6 Plasma Selectivities of GaAs (GaAs : AlGaAs ~ 36 : 1, GaAs : InGaP ~ 45 : 1) were superior at BCl3/CF4 Plasma Selectivities of GaAs (GaAs : AlGaAs ~ 16 : 1, GaAs : InGaP ~ 38 : 1), 20W RF chuck power, 300W ICP source power and 7.5 mTorr. Addition of (5 -15%)SF6 or (15%)CF4 to BCl3 produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP. Specially addition over 67% CF4 present definitely low selectivities of GaAs over AlGaAs and InGaP. (boiling points of etch products: AlF3 ~ 1300℃, InF3 ＞ 1200 ℃ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface(BCl3/SF6 RMS ~ 9 nm, BCl3/CF4 RMS ~ 2 nm). It shows that planar inductively coupled F-based plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP |
| 저자 | 장수욱1, 류현우1, 최충기1, 문준희1, 이장희1, 유승열1, 임완태2, 이제원1, 전민현1, 조관식1, 송한정1, 백인규3, 권민철3, 문성진4, 신동현4 |
| 소속 | 1인제대, 2나노기술 응용(연), 3(주) 유니벡, 4부산과학영재학교 |
| 키워드 | F-based plasma; Dry etching; PICP; InGaP |
