| 초록 |
Phase change memory (PCM) has become one of the most promising candidates for universal non-volatile memory due to its fast program and access times, large cycling endurance and extended scalability. However, the critical challenge of PCM lies in its high power consumption which has been the most significant obstacle to its widespread commercialization. Here, we present a simple and robust platform for structuring silicon oxide layer at nanometerscale using block copolymer self-assembly, which can lead to local blocking of the contact area between a heater electrode and a phase-change material. The writing current was observed to decrease by approximately 4 times as the areal fraction of silicon oxide nanostructures increases from 0% to 75%. The corresponding computer simulation provides better understanding for scrutinizing how the writing current is reduced by the localized switching of block copolymer-blocked phase change materials. |
