| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 가을 (10/26 ~ 10/28, 제주국제컨벤션센터(ICCJEJU)) |
| 권호 |
20권 2호 |
| 발표분야 |
무기재료_포스터 |
| 제목 |
Crystal growth of nano-AlN by CVD |
| 초록 |
Aluminum Nitride(AlN) has a wide-band gap (6.015eV) and a high thermal conductivity(180W/mK). It is promising for a broad range of electronical, optoelectronical and thermal interface material applications. Recently, electronic devices have been developed as miniaturization. Several studies have been devoted to develop nano-scale materials. Nano-AlN can be fabricated by CVD method with NH3/Al or NH3/AlCl3 as reaction gas and source, respectively. During the CVD processing, we controlled the gas flow and amount of gas by stopping gas flow. We tried to produce crystal grown nano-AlN by using Al as the source and stopping the NH3 gas flow at 1000°C. We measured the properties by SEM, XPS etc. |
| 저자 |
문수인1, 유은성1, 윤종원2, 박춘근1, 허훈1
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| 소속 |
1한국생산기술(연), 2단국대 |
| 키워드 |
Aluminum Nitride; Nano material; CVD method; Gas-off time
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| E-Mail |
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