| 학회 |
한국화학공학회 |
| 학술대회 |
2014년 가을 (10/22 ~ 10/24, 대전 DCC) |
| 권호 |
20권 2호, p.2005 |
| 발표분야 |
재료 |
| 제목 |
Diode characteristics of n-MoS2/p-Si heterojunction prepared by atomic layer deposition |
| 초록 |
Recently MoS2 has attracted great attention for electronic and catalyst applications. Diodes of np junction are one of basic elements consisting of electronic and photovoltaic devices. Here, we report diode characteristics in n-MoS2 (amorphous phase)/p-Si heterojunction. Atomic layer deposition (ALD) was used to grow the amorphous MoS2 thin film, because the film can be uniformly grown in a manner of layer-by-layer growth at low temperature (100℃). The characteristics of n-MoS2/p-Si heterojunction diodes were investigated by current-voltage and capacitance-voltage measurements. The heterojunction diodes show a typical rectifying behavior and also exhibit high ratio (~103) of photocurrent to dark current in the reverse bias region under white light illumination. |
| 저자 |
신석희, Zhenyu Jin, 한승주, 권도현, Ranjith Bose, 민요셉
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| 소속 |
건국대 |
| 키워드 |
diode; heterojunction; atomic layer deposition; Molybdenum disulfide
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| E-Mail |
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| 원문파일 |
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