| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.921 |
| 발표분야 |
재료 |
| 제목 |
Diode Characteristics of n-ZnO/p-Si Heterojunction fabricated by Atomic Layer Deposition Using Diethylzinc and 1,5-Pentanediol |
| 초록 |
ZnO thin film is grown on p-Si substrate by atomic layer deposition to form an n-ZnO/p-Si heterojunction. In our ALD process, we utilize diethylzinc and 1,5-Pentanediol (PD) as precursors of zinc and oxygen precursors, respectively. Here we compare the diode characteristics prepared by using PD with those prepared by using water. Even though the PD precursor is one of alcohols, the grown film shows excellent diode performance comparable to the ZnO grown by using water. |
| 저자 |
한승주, 신석희, Zhenyu Jin, 고동현, 민요셉
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| 소속 |
건국대 |
| 키워드 |
ZnO; Atomic Layer Deposition; Heterojunction diode; 1; 5-Pentanediol
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| E-Mail |
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| 원문파일 |
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