| 초록 |
The Cu2SnSe3 has been considered as a potential absorber for photovoltaic applications. Therefore, Cu2SnSe3 thin films prepared by selenization of Cu-Sn metal precursor layer in the presence of selenium vapor using RTA (Rapid Thermal Annealing) at different temperatures. The influence of selenization temperatures on structural, morphological, compositional and optical properties of the thin films have been investigated. The composition of the films was measured by energy-dispersive X-ray spectroscopy. X-ray diffraction (XRD) analysis confirmed the formation of single phase cubic Cu2SnSe3 films with (111) as preferred orientation. Morphological and cross sectional images of the films were examined by scanning electron microscope (SEM). The optical band gap of the deposited thin films are evaluated from the optical transmittance spectra. |
