| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Fabrication and Electrical Property of ZnO Thin Film Transistor on the PES Substrate |
| 초록 |
A low temperature process for fabricating TFT array as a backplane for display application is a cost effective solution, yet the fabrication on the flexible substrate offers more flexibility in using a display. In this study, we have fabricated ZnO thin film transistor on the flexible substrate, polyethersulphone (PES). The silicon oxide about 50 nm has been initially deposited on both sides of PES to improve mechanical strength of the substrate. The active layer of ZnO has been deposited using RF magnetron sputter and the process temperature is maintained at 150℃. A gate stack formed by SixNy and SiO2 has been chosen to improve the leakage current. The aluminum contact electrodes have been formed using shadow-mask process. The electrical performance of the fabricated device has been evaluated and the performance factors of interest have been extracted. These factors such as the on/off current ratio, the field effect mobility, the threshold voltage and the subthreshold voltage, are ~ 107, 46 cm2/Vs, 1.7V, 0.4 V/dec respectively. |
| 저자 |
조영제, santosh M.bobade, 최덕균, 박경윤, 이재규
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| 소속 |
한양대 |
| 키워드 |
ZnO; flexible display; Thin film Transistor
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| E-Mail |
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