| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Fabrication of ultra thin film transistor of poly(3-hexylthiophene) through Langmuir-Blodgett technique |
| 초록 |
The application of Langmuir-Blodgett (LB) techniques to regioregular poly(3-hexylthiophene) (RR-P3HT) offers a unique approach for constructing molecular devices., We made thin film transistor (TFT) using LB techniques. Semiconductor layers consist of RR-P3HT and CN-TFMBE. A mixture of P3HT and CN-TFMBE spread from a chloroform on Water surface forms a stable monolayer. Bottom contact device was fabricated on Si wafer which was patterned by normal photolithography process. The morphology of LB film was investigated by atomic force microscopy (AFM) and I-V characteristic was measured using semiconductor parameter analyzer. |
| 저자 |
박노활1, 조충연2, 서용석1
|
| 소속 |
1서울대, 2서울대하교 재료공학부 |
| 키워드 |
Langmuir-Blodgett technipue; P3HT; CN-TFMBE
|
| E-Mail |
|
