| 초록 |
The application of Langmuir-Blodgett (LB) techniques to poly(3-hexylthiophene) (RR-P3HT)/F-4 TCNQ offers a unique approach for constructing molecular devices., We fabricated ultra thin film transistor (TFT) using LB techniques. Active layers consist of RR-P3HT and TCNQ. A mixture of P3HT and F-4TCNQ spread from a chloroform on H2O surface forms a stable monolayer. Bottom contact type device was fabricated on Si wafer which was patterned using a photolithography process. The morphology of LB film were investigated by atomic force microscopy and I-V characteristic was measured by semiconductor parameter analyzer |
