| 학회 | 한국화학공학회 |
| 학술대회 | 2011년 봄 (04/27 ~ 04/29, 창원컨벤션센터) |
| 권호 | 17권 1호, p.753 |
| 발표분야 | 재료 |
| 제목 | Characteristics of Gallium Nitride (GaN) Films Grown By a Solution Coating Method Using Ga(mDTC)3 Precursor |
| 초록 | In this study, the properties of GaN thin films grown by a solution coating method using a Ga(mDTC)3 precursor solution are investigated. The precursor solution was prepared by dissolving Ga(NO3)38H2O and (CH3)2NCSSNa2H2O in a methanol and subsequently mixed with CHCl3 under ultrasonification. The precursor solution was then deposited on Al2O3 c-axis substrates by a spin coating method to form a seed layer for GaN thin film growth. The spin-coated samples are treated using NH3+N2 gas mixtures at 850 ˚C for 10 min and went through a series of chemical reactions to yield GaN seed layer.The characteristics such as composition ratio, structural properties, and optical properties of GaN seed layers as well as epitaxial layers grown on top of seed layers are investigated by means of NMR, XRD, SEM, and XPS, respectively. Acknowledgement: This research was supported by the Human Resources Development Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20104010100580) funded by the Korea Ministry of Knowledge Economy. |
| 저자 | 박승배, 김홍탁, 박진호 |
| 소속 | 영남대 |
| 키워드 | GaN; Epi-layer; HVPE; solution coating |
| 원문파일 | 초록 보기 |
