| 학회 |
한국공업화학회 |
| 학술대회 |
2022년 봄 (05/11 ~ 05/13, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 |
26권 1호 |
| 발표분야 |
[디스플레이] 미래형 디스플레이용 페로브스카이트/양자점 발광체 및 소자 |
| 제목 |
Barrierless carrier injection mechanism in quantum dot electroluminescent devices |
| 초록 |
Quantum dots (QDs)-based light-emitting diodes (QLEDs) have shown remarkable progress in device performance after employing organic-inorganic hybrid structure. The key feature of this structure is of enhanced hole injection to QDs regardless of a variety classes of hole transport materials, and even allows for operating QLEDs at sub-band gap voltages. Herein, we propose the electrostatic potential gain derived from energy landscape as the origin of improved hole injection process. Spectroscopic study revealed that the Fermi level of QDs reorganizes overall energy landscape of QLEDs, unlike typical flat-band scheme and realizes large potential gain on hole injection process. This effect exceeds the microscopic potential gain by Coulombic interaction of as-introduced charge. Our finding clarifies how QDs accommodate barrierless carrier injection in the hybrid QLEDs and suggests generalized design principle for high performance devices. |
| 저자 |
임재훈 |
| 소속 |
성균관대 |
| 키워드 |
양자점; 전계발광소자; 디스플레이
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| E-Mail |
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