| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Antimony Surfactant Effect on p-GaN growth by Metal Organic Chemical Vapor Deposition (MOCVD) |
| 초록 |
An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as 1030ºC and 900ºC were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN |
| 저자 |
이영곤, Karthikeyan Giri Sadasivam, 백광선, 김봉준, 김학준, 이준기
|
| 소속 |
전남대 |
| 키워드 |
P-GaN; surfactant; antimony
|
| E-Mail |
|
