| 초록 |
Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. We investigated the abrasive size effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8 inch blanket wafers as deposited Cu and TaN film, respectively. The removal rate of copper film was increased linearly as increasing of abrasive size but tantalum-nitride film was increased exponentially as increasing of abrasive size. Abrasive size reaches at 70[nm], then, the selectivity goes down. |
