| 초록 |
Group 6 transition-metal dichalcogenides (TMDs) has been vastly considered as a promising candidate for diverse application such as flexible device, gas sensor, semiconductor channel, and optical device because of its excellent electrical, mechanical, and optical properties. Hence, for practical applications, it is significantly important to form a high-quality uniform few-layer TMDs thin film directly on a desired substrate, especially silicon based substrate. To date, large scale mono-layer or few-layer n-type MoS2 among TMDs has been successfully synthesized or fabricated on various substrate by chemical vapor deposition and pulsed laser deposition (PLD). However, there are still several difficulties in the large-scale fabrication of p-type TMDs like WSe2, especially on Si/SiO2 substrate due to sensitivity of selenide compounds. Herein, we successfully fabricated few-layer WSe2 thin films uniformly on centimeter scale Si/SiO2 substrate using PLD, and the number of layers was artificially controlled through the number of pulses control. Raman analysis was used to determine the overall quality and uniformity of the WSe2 thin film. The binding energy was determined using X-ray photoemission. Through a commonly used photolithography process, we fabricated field effect transistor based on as grown few-layer WSe2 thin film and analyzed basic electrical properties. |
