| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
E. 환경/센서 재료 분과 |
| 제목 |
Multi-junction transition metal dichalgeondie decorated p-type silicon photocathode for hydrogen evoluition |
| 초록 |
In this study, large-scale multi-transition metal dichalcogenide (multi-TMDs) thin film catalyst was fabricated on p-type silicon (p-Si) photocathode via pulsed laser deposition (PLD) to improve photoelectrochemical (PEC) performance of p-Si photocahtode. The fabricated MoS2/WS2/WSe2 was designed to form multi-staggered gaps (type-Ⅱ band structure) with p-Si, which can effectively transfer the photogenerated electrons from p-Si to the electrolyte. Using Raman spectroscopy, we verified the spatial uniformity of MoS2/WS2/WSe2. The MoS2/WS2/WSe2/p-Si shows high photocurrent density of 11 mA/cm2 under AM 1.5 G illumination at 0 V with respect to the reversible hydrogen electrode. Through a comparison between the PEC performances of homo-structure TMDs /p-Si and multi-TMDs/p-Si, we demonstrated that the multi-TMDs/p-Si improves the PEC performance significantly more than both homo-structure TMDs/p-Si and bare p-Si. |
| 저자 |
서세훈1, 김승규1, 최호중1, 이종민1, 윤홍지1, 박광협2, 박준철1, 정윤성1, 송재선1, 정상윤1, 박현웅2, 이상한1
|
| 소속 |
1광주과학기술원, 2경북대 |
| 키워드 |
transition metal dichalcogenides; heterostructure; pulsed laser deposition; hydrogen evolution; photoelectrochemical
|
| E-Mail |
|
