| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 |
19권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
Preparation of highly porous organosilica structure for narrow gap filling in 25 nm shallow trench isolation |
| 초록 |
Highly porous organosilica (POS) structure in 25-nm-wide shallow trenches of a patterned wafer was synthesized by vapor-phase synthesis using dual-surfactant solution and vaporized precursors. As structure-directing agents, nonionic triblock copolymers and cetyltrimethylammonium bromide (CTAB) were employed in the surfactant solution. Tetraethyl orthosilicate (TEOS) and bis(trimethoxysilyl)ethane (BTSE) were diffused and hydrolyzed at the surfactant solution. The vaporized precursors were continuously supplied during condensation of organosilica by a nonvolatile catalyst. This process offers a minimized shrinkage in comparison with conventional sol–gel reaction during condensation reaction. As-synthesized POS had a pore size of 4.67nm, a dielectric constant of 1.65 and a Young's modulus of 5.20 GPa. The improved mechanical properties of the organosilica were attributed to crosslinking of TEOS and BTSE. |
| 저자 |
서영덕, 장정식
|
| 소속 |
서울대 |
| 키워드 |
Porous organosilica; vapor phase synthesis
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| E-Mail |
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