| 초록 |
Preparing theDSSCs which is capable of better penetration electrolyte to photoelectrode is effective to obtain higher DSSCs performance. However, flat structure photoelectrode has so far restriction its low surface area to easy penetrated electrolyte for the better DSSCs performance. For enhancement of cell performance while less using dye, we suggest a simple process to fabricate hole pattern TiO2 layer that involves the predeposition of SU-8 photoresist on FTO, followed by the deposition of nanocrystalline TiO2 and continuous calcinations process for elimination of SU-8 photoresist. TheDSSCs based on the flat structure photoelectrode showed acell performanceof 4.57%, which is a little higher than of theDSSCs fabricated using a hole pattern structure TiO2 photoelectrode. However, the hole pattern structure photoelectrode showed bettercell performanceper amount of dye loading to photoelectrode than flat structure photoelectrode. It suggests that hole pattern structure photoelectrode basedDSSCs can potentially improve transmitted through the FTO and penetration of electrolyte to photoelectrode although less amount of dye to photoelectrode. |
