| 초록 |
For fabrication and electrical characteristic of utilization of high-k inorganic materials and easily processable organic dielectrics of the oxide thin film transistor (OTFT), a new approach of combining inorganic-organic materials as gate dielectrics is introduced in this study. These complementary constituents combine high permittivity of the inorganic inclusions and high break down strength, and easy processability of the organic counterparts. We focus on one of the hybrid inorganic-organic dielectrics using polymeric-nanoparticle composites. Poly(4-vinylphenol)(PVP)/Y2O3 gate dielectric films mixed with methylated poly(melamine-co-formaldehyde)(PMF) were fabricated. The surface morphologies of the gate dielectrics were characterized with atomic force microscope. Various OTFT characteristics such as capacitance and leakage current measurements were carried out using an Aglient4155C and Agilent E4980A, respectively. |
