| 초록 |
When photoresist (PR) materials are coated and developed on delicate functional organic layers during photolithographic processes, those organic layers can be damaged by lithographic solvents. To resolve this issue, we adopted an orthogonal photolithography system using fluorous solvents to minimize damages on underlying layers. Following this concept, we synthesized a fluorous solvent-soluble polymer resist, P(FDMA-r-AHMA), by random copolymerzation of 1H,1H,2H,2H-heptadecafluorodecyl methacrylate and 6-(anthracen-9-yl)hexyl methacrylate (AHMA). A solubility change takes place after UV exposure througha photo-dimerization event of anthracene moieties. In contrast to chemically amplified photoresist systems using decomposition reactions, photo-dimerization doesn't produce any byproducts which may be great benefit for cleaner processing of delicate organic materials, including those for OLEDs fabrications. |
