| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Electrical control of device-quality complex oxide heterostructures |
| 초록 | Complex oxide thin films have attracted significant attention due to a wealth of physical phenomena, such as Mott transitions arising from strong interactions in d-bands. Moreover, the physical phenomena observed in these materials exhibit sensitivities, which are not found in conventional semiconductors and give rise to abrupt changes in their electrical properties depending on the means of control. The richness of electronic phases and unique functionalities of complex oxides are suitable for applications in next generation electronic devices. To realize new electronic devices with complex oxides, it is essential 1) to synthesize device-quality oxide heterostructures, 2) to understand the mechanisms of the electrical transport and 3) to control the transport properties of complex oxide heterostructures. In this talk, electrical transport phenomena and their electrical control will be discussed in nanoscale complex oxide thin films and heterostructures. First of all, I will present the importance of materials quality in achieving the desired control over transport properties in complex oxide thin films; in particular, low-energetic deposition techniques, such as hybrid molecular beam epitaxy (MBE) using metal-organic source, are shown to produce complex oxide thin films with extremely low unintentional defect concentrations. We demonstrate record electron mobilities in thin films of a prototype complex oxide, La-doped SrTiO3, which exceed even those of single crystals. Second, the feasibility of modulation doping approach using complex oxides will be also discussed. This will allow for purely electronic modulation of a carrier density in the absence of other structural changes. |
| 저자 | 손준우1, Susanne Stemmer2 |
| 소속 | 1포항공과대, 2UC Santa Barbara |
| 키워드 | 산화물 박막; 전자이동도 |
