| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Fabrication of 4H-SiC Schottky UV photodiodes |
| 초록 | SiC is a good candidate for visible-blind UV detectors due to wide bandgap (2.3~3.2eV), and relatively low absorption coefficient at UV region (1.33*103cm-1 at λ=325nm) makes SiC more attractive choice than other wide band-gap materials such as GaP and GaN. Devices were fabricated on 2 inch 4H-SiC wafers purchased from Cree Inc. Modified RCA cleaning and sacrificial oxidation process were performed to clean the surface of SiC. Ni Ohmic contact was formed on the backside of the sample by e-gun evaporation and following annealing process. 7.5nm-thick semitransparent Pt films were deposited on the front side to form Schottky contact. Thin metal layer may absorb and reflect half of the incident radiation, so part of Pt films were removed by conventional lift-off technique to enhance UV absorption. After Schottky contact formation, to improve the metal-SiC interface, low temperature hydrogen annealing was performed under hydrogen conditions. Relative responsivities of the fabricated devieces were measured. |
| 저자 | 이종호1, 임정혁1, 문정현1, 오명숙1, 송호근1, 이재빈2, 김형준1 |
| 소속 | 1서울대, 2쌍신전자통신 |
| 키워드 | SiC; UV; ultraviolet; Schottky; detector; photodiode |
