| 초록 |
In the atomic force microscope (AFM) anodization lithography, it is not clear how tunneling process is accomplished. After an AFM tip is approached to the resist surface , the anodization process is controlled by a tunneling current. The aim of this study was to explain the anodization mechanism related to energy band bendin in nano-size pattern. In this lithography mechanism, the threshold voltage for causing anodization is affected that the carrier depletion region of the downward band bending for tip-organic resist. In this study, we investigated the effect of the energy-level of organic resists when other lithographic parameters are fixed. The TTF and BEDT-TTF were used as organic resists for AFM anodization lithography. These compounds are well-known electron donor molecules. The lithographic starting voltage depends on the energy levels of tip and resist, and the threshold voltages of TTF and BEDT-TTF were found to be 8V and 4V based on our experimental data. The applied current during the anodic reaction was monitored by scanning tunneling spectroscopy. |
