| 초록 |
ZnO has been researched to apply for various devices such as LED, photo detector, photovoltaic and photoelectrochemical (PEC) cells due to proved optical and electrical properties. Controlling optical and electrical properties of ZnO layers is a key factor to research for those devices. Antimony (Sb) doping in the ZnO is expected to show ambipolar characteristics depending on doping behavior. The substitutional doping in Zn and O sites induces n-type and p-type, respectively. Therefore, Sb dopants influence the optical and electrical properties of ZnO layers. In this research, we confirm donor behavior of Sb dopants in ZnO layers. Photocurrent responses which are involved with substitutional dopants of nanostructured ZnO layers are investigated by photoelectrochemical test. As a result, we successfully gained enhanced photocurrent from Sb-doped ZnO layers and it could be one of the applicable materials for photovoltaic and photoelectrochemical (PEC) cells for energy conversion and harvesting that are important issues to cope resource depletion. |
