| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Optimization of Gate-Bias Stability and Electrical Properties of Organic Field-Effect Transistors on Fluorinated Dielectrics |
| 초록 |
polystyrene-r-poly(pentafluorostyrene) copolymer series were synthesized and spun-cast on a SiO2 gate dielectric for pentacene. Surface energies (γ) of the fluorinated polymers decreased from 46.9 to 24 mJ·m-2 with an increase in PFS mole%. As the surface energy difference between pentacene and the polymers became larger, small-sized pentacene grains were dominant on the polymer surfaces, instead of terrace-like crystals. The resulting OFETs showed large variations in µFET from 0.82 to 0.28 cm2·V-1·s-1. Additionally, an optimized fluorinated portion in the copolymer could effectively improve gate-bias stress stability of these OFETs during a long-term operation, without any severe degradation of μFET. 25 mole% PFS-loaded copolymer-coated SiO2 dielectric with γ of ca. 35.0 mJ·m-2 could induce charge-transport favorable grains of pentacene and excellent charge detrapping, similar to the extensively-fluorinated polymers, which developed low-graded pentacene crystals in OFETs. |
| 저자 |
이민정, 장미, 신환호, 배명원, 육지호, 양회창
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| 소속 |
인하대 |
| 키워드 |
gate-bias stability; fluorinated dielectrics; organic field-effect transistor
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| E-Mail |
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