| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
The evaluation of crystalline quality for AlN single crystal using chemical wet etching methods. |
| 초록 |
We determined the crystalline quality of AlN single crystal using chemical wet etching process via calculation of etch pits density (EPD). AlN single crystal grown by physical vapor transport (PVT) growth method has the wurtzite structure. When its crystalline was characterized by etching process, it showed that hexagonal etch pits in Al-polar face and hillock etch pits in N-polar face was observed, and calculated EPD. To verify reliable EPD of AlN, optimum etching process was needed. Therefore, to obtain optimum condition among chemical wet etching methods, we compared two different types of etching processes with molten KOH/NaOH eutectic in a high temperature (350 °C) and KOH/H2O2 aqueous solution in a low temperature (80 °C) via optical microscope (OM), atomic force microscope (AFM) and scanning electron microscope (SEM). We obtained more reliable EPD values when adapting the etching condition of KOH/H2O2 aqueous solution in a low temperature than molten KOH/NaOH eutectic in a high temperature as preventing over etching phenomena. |
| 저자 |
심광보, 강효상, 강석현, 박철우, 박재화, 이희애, 이정훈, 이주형
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| 소속 |
한양대 |
| 키워드 |
AlN; single crystal; chemical wet etching; etch pits density
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| E-Mail |
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