| 초록 |
In this work, a photomultiplication-type organic photodiode (PM-OPD) with a Ag2S quantum dots (QD)-embedded polymer morphology is introduced to enhance carrier lifetime and carrier mobility, both of which contribute to more efficient gain generation. Well difined electron trap of Ag2S QDs within poly(3-hexylthiophene-2,5-diyl) (P3HT) matrix is achieved using a typical bulk-heterojuction, confirmed by UV-Vis absorption spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction analyses. Transient photocurrent analyses clearly show that the Ag2S QDs embedded morphology efficiently enhance electron trapping from localized Ag2S QDs. Space charge limited current study shows that gradual increased electron trap density of state and hole mobility in the matix. |
