| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Gas flow simulation in HVPE bulk-GaN growth for high brightness LED |
| 초록 | Recently, gallium nitride (GaN)-on-sapphire have been using for electronic devices such as high electron mobility transistor (HEMT), and light emitting diode (LED). Power devices based on GaN-on-sapphire has higher threading dislocation density (TDD) which has lower breakdown voltage and higher off-current than the power device based on free-standing GaN. Free-standing GaN wafer grown by hydride vapor phase epitaxy (HVPE) could be a candidate to enhance electrical performance of the fabricated devices. In this paper, we investigated the effect of susceptor structure to the gas flow in HVPE reactor. Also, we observed gas flow by using the ANSYS flow simulation software. During the GaN growth, gas vortex was generated at the susceptor and sapphire interface, which affects GaN wafer’s quality. Therefore, structures of the susceptor were modified and changed from a step structure(90°) to a slope shape(51.5°) for reduce the gas vortex. After actual HVPE growth process, we measured GaN wafer curvature and total thickness variation (TTV) to characterize. Simulation results showed that the slope structure reduced the gas vortex about 40% compared to the step structure. Based on the results above, the thickness of the polycrystalline GaN formed at the edge of the GaN wafer with slope structured susceptor was reduced by 30% compared with that of step structure. It was also confirmed that curvature and TTV of the GaN wafers were improved. - This work was financially supported by the Brain Korea 21 Plus Program in 2017. - This research was supported by the Commercialization Promotion Agency for R&D Outcomes(COMPA) funded by the Ministry of Science and ICT(MSIT). [2017K000350] |
| 저자 | 이재언, 심재형, 박진성, 전경빈, 심태헌, 박재근 |
| 소속 | 한양대 |
| 키워드 | <P>simulation; gas flow; GaN; LED; HVPE</P> |
