| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 가을 (10/07 ~ 10/08, 대구 EXCO) |
| 권호 |
35권 2호 |
| 발표분야 |
분자전자소재 및 소자 |
| 제목 |
The effect of functional groups of dielectric surface on the IGZO-based thin film transistors |
| 초록 |
Metal oxide semiconductors have several advantages such as transparency, high transistor performance and air stability over amorphous silicon and organic semiconductors. In-Ga-Zn-O system (IGZO) semiconductor is one of the metal oxide and also has high electron conductivity. In this study, a change of characteristics of the IGZO-based TFT is examined according to the different dielectric functional groups. Our team chooses silicon oxide and polymer bilayer dielectric system to change dielectric surface. We use polymers having different functional groups, poly(4-vinylpyridine)(PVP) which is electron donating group, poly styrene(PS) and poly(4-vinylphenol)(PHS) which is electron withdrawing group. |
| 저자 |
박미정1, 장재영1, 양찬우1, 안태규1, 박선욱1, 성지현2, 황지영2, 박찬언1
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| 소속 |
1포항공과대, 2LG화학 |
| 키워드 |
IGZO; TFT; dielectric functional groups
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| E-Mail |
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