| 초록 |
We studied the synthesis and patterning results of small molecular resists (dendritic octaphenol(dOPhOH)) with high glass transition temperatures based on the advantage of high Tg like poly(4-hydroxystyrene) as a photoresist. The high Tg plays a key role in increasing the resolution by inhibiting the diffusion of the acid catalyst in the chemical-amplified photoresist system. By comparing the degree of acid diffusion with a dendritic hexaphenol(dHPhOH) derivative similar with dOPhOH, it was confirmed that the diffusion characteristics were significantly lower at the same temperature. Based on the results, a 50 nm pattern was formed under electron-beam lithography conditions. In addition, by introducing a perfluoroalkyl ether chain (PFAE), it was confirmed that radical-induced cross-linking reaction is possible, and a negative type pattern was implemented. Small molecules with high Tg are expected to be applied as photoresists useful for realizing high resolution lithography. |
