| 학회 | 한국화학공학회 |
| 학술대회 | 2008년 봄 (04/23 ~ 04/25, 제주ICC) |
| 권호 | 14권 1호, p.1286 |
| 발표분야 | 재료 |
| 제목 | Thermal annealing effects on photoluminescence and structural properties of CdSe nanoparticles |
| 초록 | The annealing effects on the structural and optical properties of CdSe nanoparticles have been elucidated. Efficiency improvement and cell stabilization of CdSe nanoparticles can be achieved by controlling the annealing parameters in air or oxygen at relatively higher temperatures (250 °C ~ 450 °C). The obtained samples were characterized by TEM, XRD, X-ray photoelectron spectroscopy (XPS), UV–Vis absorption spectra and PL spectra. TEM results revealed that after annealing at 450 oC nanodots were changed to nanorods having hexagonal phase. XRD analysis exhibited air annealing-induced phase transition in the nanocrystalline CdSe from cubic Zinc Blende to hexagonal Wurtzite structure. After annealing at 250 °C and 350 °C, the intensity of PL emission peak was substantially increased. This considerably enhances the electronic properties of the CdSe nanocrystals. This work was supported by grant No. RTI04-01-04 from the Regional Technology Innovation Program of the Korean Ministry of Commerce, Industry, and Energy (MOCIE), and the researchers involved in this work was supported by the 2nd phase of the BK21 Program. |
| 저자 | 움메 파르바1, 나영희1, 구대욱1, 트롱윈탐윈1, 전우석1, 유상현2, 김연수2, 박진호1 |
| 소속 | 1영남대, 2주식회사 새한 |
| 키워드 | Semiconducting II-VI material; Annealing; XPS; XRD; PL spectroscopy |
| 원문파일 | 초록 보기 |
