| 학회 | 한국공업화학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 | 25권 1호 |
| 발표분야 | 포스터-나노 |
| 제목 | Effect of post-annealing temperature on SiOCH film deposited by PECVD |
| 초록 | It is necessary to increase the process speed of the interlayer insulating film and the multilayer wiring technology for miniaturization. Among these, the characteristics of low dielectric materials used in interlayer insulating films generally require electrical, chemical, mechanical, and thermal characteristics. The previously used SiO2 thin film has a dielectric constant of about 4.0, which is a problem that is too high. According to previous studies, in the development of next-generation semiconductor low-k materials, the dielectric constant of the interlayer material of metal wiring is required to be 3.0 or less. In the previous paper, the effect of the annealing time on the SiOCH thin film was evaluated. In this study, the effect of the annealing temperature on the thin film was evaluated. |
| 저자 | 전재성1, 이재선1, 유은성1, 정대용2, 허훈1 |
| 소속 | 1한국생산기술(연), 2인하대 |
| 키워드 | CVD; ramanspectroscopy; low-k; post-annealing |
