| 초록 |
This study is the synthesis and development of indium phosphide (InP) quantum dots (QDs) for fundamental device mechanism of Cd-free QLEDs. However, InP nanocrystals synthesized in organic solutions show low band-edge photoluminescence due to surface traps, dangling bonds, stacking faults. To improve the properties of the InP QDs, surface phosphorous atoms lying at the origins of trap sites were removed by nanocrystals were passivated with shell materials that have wider band gaps. we study that highly luminescent core–shell InP@ZnSe QDs have been fabricated via a injection method. Optical properties of the synthesized QDs were investigated with UV-vis, PL, QLED's device characteristics were also progressed. The average size of the QDs were shown to be 3.2nm by the TEM data. The first exciton of QDs is 620nm. The InP/ZnSe full width at half maximum is 40nm and the PLQY is 65%. |
