| 초록 |
Fabrication of InP/ZnSe/ZnS QDs was successfully done with about 13nm in diameter in size with thick multi-layered ZnS outer shell. The resulting QDs show the highest PLQY of 82% and full width at half maximum (FWHM) narrow up to 40nm. Furthermore, with the syntheszied QDs, quantum dot light-emitting diodes (QLEDs) were fabricated via conventional structure on indium tin oxide (ITO) glass substrate, poly (ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS), zinc magnesium oxdie (ZnMgO), poly(N,N′-bis(4-butylphenyl)N,N′-bis(phenyl)benzidine) (poly-TPD), and Aluminum(AL). The synthesized QLEDs showed to achieve external quantum efficiency(EQE) of 2.0% green QLEDs. |
