| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Solution-processed N-type Fullerene Field Effect Transistors Using CVD-grown Graphene Electrodes |
| 초록 |
Solution-process organic field effect transistors (OFETs) have received great interest as key elements for all-organic electronics applications aimed at realizing low-cost, lightweight, and flexible devices due to the feasibility of easy and large-area processing. However low performance levels of n-type solution process bottom-contact OFETs are still serious problem to be commercialized. In this study, we introduce CVD-grown graphene as source/drain(S/D) electrodes and fullerene as a solution-processable n-type semiconductors deposited on graphene S/D electrodes and gate dielectric layers towards the fabrication of n-type bottom-contact OFETs. We investigated the effect of thermal annealing on reorganizing properties and field-effect performances of the overlaying solution-processed fullerene semiconductors. |
| 저자 |
정용진1, 황지헌1, 박선욱1, 김래호1, 윤동진2, 김세현3, 박찬언1
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| 소속 |
1포항공과대, 2삼성종합기술원, 3영남대 |
| 키워드 |
Fullerene; Graphene; OFETs
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| E-Mail |
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