| 초록 |
We have fabricated thin film Metal-Polymer-Semiconductor (MPS) capacitors using silver(Ag) ink electrodes that are directly patterned by ink-jet printing. PVA (polyvinyl alcohol) and PVP (poly-4-vinylphenol) thin films for dielectric polymer layer were prepared by spin coating on p-Si substrate. Capacitance voltage (C-V) behaviors of the ink-jetted Ag/PVA/p-Si and ink-jetted Ag/PVP/p-Si MPS structures were investigated at high frequency of 1MHz and for a bias voltage ranging from -30V to +10V. In addition, the C-V behaviors of the ink-jetted Ag/PVA/p-Si and ink-jetted Ag/PVP/p-Si were compared with Al/PVA/p-Si and Al/PVP/p-Si of evaporated Al electrode. For evaporated Al, PVP shows more efficient performance of capacitance, while, for ink-jetted Ag, PVA shows higher capacitance. Flat band voltage (VFB) of ink-jetted Ag/PVA/p-Si device could be decreased down to 0.9 V with an additional UV treatment. Cross-linking of PVA with the UV treatment could be confirmed by FT-IR. Therefore, it was found that deposition methods of electrodes and chemical states of dielectric polymers could determine electrical performances, respectively. |
