| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 봄 (04/14 ~ 04/15, 전경련회관) |
| 권호 |
30권 1호, p.298 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Synthesis of Photoacid Generator Containing Resists for Atomic Force Microscope Lithography |
| 초록 |
Photoacid generators (PAGs) have been widely used as a key component for a chemically amplified photoresist. An arylsulfonium triflate group containing PAG monomer was synthesized and its homo- and co-polymerization were carried out with methacrylate-based monomers. The molecular weight and the content of PAG were controlled for improving thermal stability and sensitivity for both atomic force microscope lithography and electron beam lithography. The presence of a PAG unit as an electron acceptor in the polymer system plays a key role for the high speed atomic force microscope (AFM) lithography. Based on this concept, the fabrication of anodization patterns was initiated at the low bais voltage and the high speed of AFM patterning was achieved. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed. |
| 저자 |
윤현진, 오희영, 권기진, 이해원
|
| 소속 |
한양대 |
| 키워드 |
PAG polymer; AFM Lithography
|
| E-Mail |
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