| 초록 |
For flexible display applications, barrier properties to water vapor and oxygen transport are highly required for plastic substrates, and high degree of encapsulation could be achieved by atomic layer deposition (ALD) process. Although the ALD process was known to form the defect-free layer theoretically, inevitable defects were formed in the real process due to unknown reasons. Al2O3 and ZrO2 layers were formed by ALD process and water vapor transmission rate (WVTR) decreased with layer thickness up to 20 nm. No more decrease of WVTR was observed beyond this thickness, it was confirmed that defects were still remaining and growing. A saturation of barrier properties with increasing layer thickness can be attributed to a defect-dominated gas diffusion. Alteration of Al2O3 and ZrO2 layers prevented the defect growth in a single component layer to further reduce the WVTR. Double layer formation at both sides of the substrate also contributed the enhancement of WVTR. |
