| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Characteristics of BRL on boron emitter and its contact properties in n-type silicon solar cells |
| 초록 |
BRL (Boron Rich Layer) is unintentionally formed after boron diffusion process. The BRL commonly has to be removed due to defects in this layer. However, it has been reported that BRL has better electrical conductivity than boron emitter. In this study, we investigated electrical and optical properties of BRL on boron emitter with BRL etching time. Boron emitter was formed by BBr3 liquid source at 950℃ in tube furnace. BRL was removed by wet chemical etching, HNA solution. To confirm the behavior of boron atoms in depth profile, we measured SIMS and AES with BRL etching time. TEM images also displayed to confirm the BRL regions whether it is amorphous or crystalline phase. BRL thicknesses after boron diffusion observed with SIMS, AES and TEM were coincided. We used UV-Vis spectroscopy to identify reflectance of BRL samples. Then, contact resistances (ρc) were measured between BRL and metal layer deposited with evaporation. The contact resistance was 0.8 mΩ•cm2 on non-etched BRL, and 25.6 mΩ•cm2 on BRL with etched 30 seconds. As a result, BRL has better contact properties than boron emitter. |
| 저자 |
김찬석, 이경동, 김영도, 박효민, 김현호, 박성은, 이해석, 김동환
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| 소속 |
고려대 |
| 키워드 |
silicon solar cells; boron emitter; boron rich layer
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| E-Mail |
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