| 초록 |
Cu2ZnSnS4 (CZTS) thin films were synthesized by sputtered Cu/SnS2/ZnS stacked metallic precursors followed by working environment. The sulfurization was carried out in graphite box for 10 min in a rapid thermal annealing (RTA) system with various partial pressures. Effect of partial pressure on the structural, morphological, and compositional properties was investigated by using X-ray diffraction (XRD), Raman spectroscopy, Field emission – scanning electron microscopy (FE-SEM), and X-ray fluorescence spectrometer (XRF), respectively. It is found that for all the films, CZTS crystallize with Kesterite structure. The sample that sulfurized at partial pressure of 0.01 Mpa exhibited the thinner MoS2 layer than samples which annealed at higher partial pressure. Furthermore, the performance of cells also was enhanced by diminishing the MoS2 layer that was created in the interface between Mo back contact and CZTS layer. Further the detailed analysis and discussion of effect of MoS2 secondary layer such as shunt path, defects, and interface of the CZTS/MoS2/Mo structured thin films will be discussed. |
