| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Emission wavelength extension of InAs quantum dots with various InGaAs structures |
| 초록 |
We have systematically studied the effect of various InGaAs structures on the optical properties of InAs quantum dots. The light-emission wavelength of self-assembled quantum dots (QDs) is determined by the complex interplay of parameters such as In compositions, positions and thicknesses of InGaAs layers. Introduction of various InGaAs layers into the InAs QD structures led to a red shift of 91 meV relative to the InAs QD without InGaAs layers at room temperature. The emission wavelength of the InAs QDs was tuned from 1.18 to 1.3 μm by using various InGaAs structures. Furthermore, the full width at half maximum of the photoluminescence (PL) peak of about 40 meV remained constantly despite the temperature variation ranging from 20 to 220 K. It can be attributed to the large energy-level spacing between the ground states and the first excited states of 57 meV. These results indicate that employing various InGaAs structures is useful for obtaining high quality InAs QD structures for device with a 1.3 μm operation at room temperature. |
| 저자 |
박호진1, 김종호2, 김군식1, 김도엽2, 송민경1, 신창미2, 조관식1, 류혁현2, 전민현1, 임재영2, 김종수1, 김진수2, 이동율1, 손정식2
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| 소속 |
1인제 대, 2나노매뉴팩쳐링 (연) |
| 키워드 |
InAs; quantum dot; photoluminescence
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| E-Mail |
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