| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
The evolution of InAs quantum dots with different InGaAs overgrowth layer after rapid thermal annealing |
| 초록 |
The InAs self-assembled quantum dots (QDs) have been fabricated by changing parameters such as In compositions, positions and thicknesses of InGaAs overgrowth layers. Photoluminescence (PL) measurements have been carried out to investigate the rapid thermal annealing effect on the optical properties of the InAs QDs with different InGaAs overgrowth layers. After the post-growth rapid thermal annealing, the PL spectra from the InAs QDs showed blue-shift and significant narrowing of photoluminescence linewidth, compared with the as-grown samples. It can be attributed to the interdiffusion between the InAs QDs and the InGaAs layer and to the size homogeneity of the QDs. Especially, the InAs QDs deposited between 1-nm-thick In0.15Ga0.85As and 7-nm-thick InxGa1-xAs (x=0.15 and 0.05＜x＜0.25, respectively), compared with InAs QDs capped by InGaAs/GaAs combination layers, experience an anomalous variation such as large blue-shift and dramatic decline of PL intensity during annealing process. These results indicate that the optical properties and the crystal qualities of the InAs QDs are greatly dependent on the complex interplay of parameters such as In compositions, positions and thicknesses of InGaAs layers by annealing treatment. |
| 저자 |
박호진1, 김종호2, 김민수1, 전수민2, 김현지1, 조민영2, 조관식1, 류혁현2, 전민현1, 임재영2, 김종수1, 이동율2, 김진수1, 손정식2
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| 소속 |
1인제 대, 2나노매뉴팩쳐링 (연) |
| 키워드 |
InAs; quantum dot; rapid thermal annealing; photoluminescence
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| E-Mail |
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