| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
A New approaches to edge metal analysis of silicon wafer |
| 초록 |
Recently metal contamination of silicon wafer edge area is of concern because of the yield more device in the edge area, So the control of the edge area become more important. In this study, the detection of impurity in silicon wafer of edge metal is using VPD (Vapor phase decomposition) droplet collection in combination with ICP-MS (Inductively coupled plasma mass spectrometry. We introduces the technique of analyzing the edge area and discusses the causes of contamination the edge area of silicon wafer. |
| 저자 |
임지연, 이성욱
|
| 소속 |
SK siltron |
| 키워드 |
Metallic contamination; silicon wafer; edge; VPD; ICP-MS
|
| E-Mail |
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