| 학회 |
한국화학공학회 |
| 학술대회 |
2009년 가을 (10/22 ~ 10/23, 일산 KINTEX) |
| 권호 |
15권 2호, p.2110 |
| 발표분야 |
재료 |
| 제목 |
Atomic Layer Chemical Vapor Deposition of Hf-silicate Gate Dielectrics for Organic Thin Film Transistor Application |
| 초록 |
Atomic layer chemical vapor deposition (ALCVD) process of hafnium silicate thin films was studied for organic thin film transistor application. A precursor combination of tetrakis-ethylmethylamido-hafnium (Hf(N(CH3)(C2H5))4) and tetra-n-butyl-orthosilicate (Si(OnBu)4) was used without additional reactant gases. Each precursor shows self limiting surface reaction characteristics and the ALCVD temperature window was below 330 °C with a remarkably high growth rate of 2.3 /cycle. We also investigate the characteristics of organic thin film transistor (OTFT) using the hafnium silicate film as a dielectric layer. To observe the performance improvements, ALCVD grown Al2O3 and thermally grown SiO2 were used to fabricate OTFT devices as well. The hafnium silicate OTFT shows 3 times and 5 times higher mobility compare to the Al2O3 OTFT and SiO2 OTFT, respectively. In this study, we show the promising possibility of the applications of high-k materials to the high mobility and low operation voltage OTFT devices. |
| 저자 |
이승협, 용기중
|
| 소속 |
포항공과대 |
| 키워드 |
atomic layer deposition; high-k; organic thin film transistor
|
| E-Mail |
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| 원문파일 |
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