| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
N-type electrical doping in organic semiconductors: Formation and dissociation efficiencies of charge transfer complex. |
| 초록 |
Electrical doping is an important method in organic electronics to enhance device efficiency by controlling Fermi level, increasing conductivity, reducing injection barrier from electrode. To investigate doping characteristics, it is important to understand the process of the charge transfer complex (CTC) formation and dissociation into free charge carrier. In this paper, we report charge generation efficiency in terms of the CTC formation and dissociation efficiency of n-doped organic semiconductors (OSs). The CTC formation efficiency and its linear decrease with doping concentration are analytically correlated with the concentration-dependent size and number of dopant agglomerates by introducing the degree of reduced CTC formation. Lastly, low dissociation efficiency and saturation of dissociation efficiency in high dopant density regime is interpreted based on electrostatic perspective considering the reduced Coulomb potential barrier induced from adjacent CTCs. |
| 저자 |
김재민1, 유승준1, 문창기1, 심봄이1, 이재현2, 임희선3, 김정원4, 김장주1
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| 소속 |
1서울대, 2한밭대, 3한국과학기술원, 4한국표준과학(연) |
| 키워드 |
doping; organic semiconductors; charge transfer complexes; dissociation
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| E-Mail |
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