| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
E. Frontiers of Materials Research(선도 재료연구) |
| 제목 |
Rectifying characteristic in perovskite oxide p-n junction of La-doped SrTiO3 and In-doped SrTiO3 |
| 초록 |
La-doped SrTiO3 / In-doped SrTiO3 heterojuntion was fabricated by pulsed laser deposition. In this study, we used the combinatorial approach by pulsed laser deposition to discover p-type and n-type semiconductor oxides. Four point probe measurement was carried out to examine the conductivity of each doped SrTiO3 single layer. Hall measurement was used to verify the p-type characteristic. Rectifying I-V characteristics of the p-n junction were measuered in the temperature range of 80K ~ 350K. |
| 저자 |
허주녕, 이재찬
|
| 소속 |
성균관대 |
| 키워드 |
perovskite oxide; p-n junction; combinatorial PLD
|
| E-Mail |
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