| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Fast Pulsed Characterization of p-type MoTe2 and WSe2 FETs: Reduction of Hysteresis and Mobility Estimation |
| 초록 |
P-type semiconductors are indispensable for achieving complementary metal oxide semiconductor (CMOS) and integrated circuits (ICs) based on two-dimensional (2D) semiconductors, and tungsten diselenide (WSe2) and molybdenum ditelluride (MoTe2) are the promising channel materials for PMOS. In this work, we investigate charge trapping effects on hysteretic behaviors and field-effect mobility (μFE) of the p-type WSe2 and MoTe2 FETs using fast pulsed current-voltage (I-V) measurements. The hysteresis is reduced nearly 98 % via ramped pulsed measurements, and μFE is significantly enhanced via single pulse measurements by minimizing the charge trapping. Moreover, WSe2 FETs are found to be more susceptible to the charge trapping effects compared with MoTe2 FETs; WSe2 FETs exhibit more pronounced enhancement of μFE and reduction of hysteresis. The intrinsic electrical characteristics of p-type 2D FETs under minimized charge trapping conditions can be investigated using the pulsed I-V characterizations. |
| 저자 |
양정용1, 이찬호1, 염민재1, 염민재1, 허준석2, 유건욱1
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| 소속 |
1숭실대, 2아주대 |
| 키워드 |
PMOS; WSe2; MoTe2; Charge trapping; Pulse I-V
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| E-Mail |
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