| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Influence of temperature of AlN deposition by RF Magnetron Sputtering on Patterned Sapphire Substrate |
| 초록 |
Our group have studying for deposition of Gallium Nitride (GaN) on Sapphire substrates and focusing on single crystal GaN growth for high efficiency Light Emitting Diode (LED) devices. GaN and Sapphire have the large lattice and thermal expansion mismatch. AlN for buffer layer can alleviate the mismatches. This study investigated the temperature of AlN deposition on Patterned Sapphire Substrate (PSS). The procedures are various temperature process of AlN deposition by RF magnetron sputtering of a 99.99% pure aluminum target in an Argon (Ar) and Nitrogen (N2) mixture gas on Patterned c-plane Sapphire Substrate (PSS). AlN was deposited about 200nm on PSS and analyzed X-ray Diffraction (XRD). And The morphology of these samples were showed by Field Emission Scanning Electron Microscope (FE-SEM) and AFM (Atomic Force Microscope). |
| 저자 |
정우섭1, 강병훈1, 이창민1, 김대식1, 정서주1, 배선호1, 이지은1, 진정근2, 변동진1
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| 소속 |
1고려대, 2LG Innotek |
| 키워드 |
RF Magnetron sputtering; AlN; GaN; PSS; Buffer layer
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| E-Mail |
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