| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Molecular Beam Epitaxy of ZnSe/ZnTe superlattice buffer layers for the growth of antimonides thin films |
| 초록 |
Molecular beam epitaxy (MBE) of high quality GaSb films on GaAs (001) substrates is achieved by inserting a ZnTe/ZnSe superlattice (SLS) buffer layer. The growth condition for the ZnTe/ZnSe SLS buffer was optimized in terms of in-situ RHEED intensity observation. We have compared the quality of GaSb layer grown on GaAs and ZnTe/ZnSe SLS, and the role of ZnTe/ZnSe SLS buffer layer is discussed. The crystal quality and surface morphology of grown films were investigated by high resolution X-ray diffraction measurement (HR-XRD), atomic force microscopy (AFM) of GaSb films. |
| 저자 |
김시영1, 이웅1, 정미나1, 이홍찬1, 이상태1, 조영래2, 고항주3, 송준석4, Takafumi Yao5, 장지호6
|
| 소속 |
1한국해양대, 2부산대, 3광주광기술원 물성분석센터, 4Neosemitech Corporation, 5IMR, 6Tohoku Univ. |
| 키워드 |
MBE; GaSb; ZnSe/ZnTe; Superlattice
|
| E-Mail |
|
