| 초록 |
Pb0.92La0.08Zr0.52Ti0.48O3(PLZT 8/52/48) is widely investigated relaxer ferroelectrics to give rise to high energy storage due to slim hysteresis. However, it still has not realized satisfactory energy storage and it has a shortcoming such as deteriorated dielectric properties depending on temperature. Herein, by adding BZN [Bi(Zn2/3Nb3/1)O3] corresponding to 0, 5, 10 at% respectively, PLZT, PLZT-BZN5, and PLZT-BZN10 thick films were fabricated through aerosol deposition and post-annealed for crystallization recovery. 0.95(Pb0.92La0.08-Zr0.52Ti0.48O3)-0.05Bi(Zn0.66Nb0.33O3) PLZT-BZN5 thick films (~4 µm) are regarded as the morphotropic phase boundary (MPB) region artificially made due to partly mixing, demonstrating multi- phases and superior energy storage performance. For these aspects, the 550oC annealed PLZT-BZN5 film brought about superior energy density of 14.7J/cm3 under electric field of 1400kV/cm along with an efficiency of 81%. Furthermore, PLZT-BZN5 film exhibited predominantly low dielectric loss and improved temperature stability. Through both AD process and modifying chemical compositions of relaxor PLZT, the relaxor properties of the films were enhanced, which gave a result of excellent recoverable energy storage and thermal stability. |
