| 초록 |
Atomic Layer Deposition (ALD) is well-known thin film deposition technique and has attracted great attention in microelectronic devices due to its special features like the very thin, conformal films with controlled thickness and composition of the films possible at the atomic level. With this motivation, in this work we have prepared the NiO thin film on the silicon substrate (100) by using bis(ethylcyclopentadienyl)nickel (Ni(EtCp)2) as precursor and O2 plasma as oxidant. Initially, In order to prepare the uniform and reproducible NiO thin film, we have optimized the different parameters such as the precursor pulsing time, Ar purging time, plasma power and others. The maximum growth rate of 0.36 Å per cycle is observed for the NiO thin film. The optimized NiO thin film further characterized for the physical study to get more information regarding the structure, composition and surface nanostructure of the NiO thin film through the XRD, XPS and SEM analysis. |
